Arno Allan Penzias - Wikipedia, the free encyclopedia
|
|
Arno Allan Penzias (born ) is an American physicist and Nobel laureate in physics. Penzias was born in Munich, Germany. At age six he was among the Jewish children evacuated to Britain as part of the...
en.wikipedia.org/wiki/Arno_Allan_Penzias
|
|
|
A dielectric material is a substance that is a poor conductor of electricity, but an efficient supporter of electrostatic fields. ... A dielectric material is a substance that is a poor conductor of electricity, but an efficient supporter of electrostatic field s. If the flow of current between opposite electric charge poles...
|
whatis.techtarget.com/definition/0,,sid9_gci211945,00.h...
whatis.techtarget.com/definition/0,,sid9_gci211945,00.html
|
|
|
|
This process is known as polarization and a dielectric material in such a state is said to be polarized. There are two principal methods by which a dielectric can be polarized: stretching and rotation.
|
physics.info/dielectrics/
physics.info/dielectrics/
|
|
|
|
Yet the material's dielectric constant drops precipitously - 1,000-fold - below 100K, with no evidence of structural or phase changes in the atoms. Therein lies the mystery. ... "The fact that we see these changes offers the first real glimpse of why this material has such a large dielectric constant, and the mechanism by...
|
www.bnl.gov/bnlweb/pubaf/pr/2001/bnlpr072601.htm
|
|
|
The transistors are based on a new material, dubbed SANDs for self-assembling nanodielectrics, and are the product of research into creating new types of dielectrics for future technology. The Northwestern group's goal was to create a dielectric material that was not only robust, but printable;
|
www.dailytech.com/New+Dielectric+Material+Promises+Radi...
www.dailytech.com/New+Dielectric+Material+Promises+Radiation+Resistant+Transistors+Flexible+Computers/article12095.htm
|
|
OFSG has shown potential as a new interlayer dielectric material for a high yield Cu-Low k process. Introduction; Interlayer dielectric (ILD) materials capable of surviving common IC processing schemes must balance materials properties, such as minimizing the dielectric constant and maximizing mechanical strength.
|
www.airproducts.com/NR/rdonlyres/371383E1-392B-430A-908...
www.airproducts.com/NR/rdonlyres/371383E1-392B-430A-9085-1FC1361C60E3/0/OFSGPaper.pdf
|
|
We have presented a numerical simulation of the deposition of dielectric material using an insulating porous template. A Maxwellian distribution has been used to calculate the original ion velocity when the ion leaves the plasma and enters the sheath.
|
www.iop.org/EJ/abstract/0022-3727/40/24/025
|
|
The basis for the work is GaSonics' proprietary system using a downstream microwave plasma to remove photoresist material without damaging low-k dielectric material on the wafer surface. The system features a patented, large-diameter microwave plasma source and both platen and lamp heating.
|
www.allbusiness.com/electronics/computer-equipment-comp...
www.allbusiness.com/electronics/computer-equipment-computer/6664819-1.html
|
|
Method for removing or inactivating corrosion-forming etch residues remaining on the surface of a dielectric material after etching a metal layer which is supported by the dielectric material. The sur ... 20. The method of claim 1 wherein said inorganic dielectric layer comprises a ferroelectric material. 21. The method of...
|
www.freepatentsonline.com/6368517.html
|
|
