VLSI Discussion Board ... Fringing capacitance is a by-product of technology scaling. It occurs when the W/T (plate width to thickness) reduces to almost unity, which means that the width of the material is comarable to its height. When this happens we need to consider capacitive efects due its sides also.
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www.vlsibank.com/sessionspage.asp?titl_id=865
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Abstract—A soil moisture sensor was developed which was based on fringing capacitance and the increase in dielectric constant of a soil-water mixture with water content. The frequency shift of an RC oscillator connected to the capacitance sensor electrode was measured by a microcontroller.
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www.eesensors.com/DocsPDFs/ESP06_moistp.pdf
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Optimal Wire-Sizing Function with Fringing Capacitance Consideration; Chung-Ping Chen and D. F. Wong; Department of Computer Sciences, University of Texas, Austin, Texas 78712; Abstract; In this paper, we consider non-uniform wire-sizing under the;
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portal.acm.org/ft_gateway.cfm?id=266295&type=pdf
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In a method of reducing the fringing capacitance of a MOSFET, the nitride spacers on the sides of the MOSFET gate are etched away to form trenches, which are plugged to define air spacers. ... What is claimed is: 1. A method of reducing the fringing capacitance of a MOSFET device, comprising forming an air spacer on one...
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www.freepatentsonline.com/7132342.html
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A fringing capacitance measurement probe and a method for determining a surface dielectric constant. The fringing capacitance measurement probe includes a planarized surface probe element for making i ... 2. The fringing capacitance measurement probe of claim 1, wherein the continuous length of the metal conductive line...
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www.freepatentsonline.com/6856146.html
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In this paper, the fringing fields associated with the discontinuities are dealt with by adjusting the permittivity and permeability assigned to the field nodes that are immediately adjacent to the discontinuities.
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rose.bris.ac.uk/dspace/handle/1983/1109
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In this paper we look at the quantitative picture of fringing field effects by use of high-k dielectrics on the 70 nm node CMOS technologies. ... By using Monte-Carlo based techniques, we extract the degradation in gate-to-channel capacitance and the internal, external fringing capacitance components for varying values of K.
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doi.ieeecomputersociety.org/10.1109/ICVD.2001.902704
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With the reducing distances between wires in deep sub-micron technologies, coupling capacitances are becoming significant as their magnitude becomes comparable to the area capacitance and fringing capacitance of a wire. ... Martin Kuhlmann, Sachin S. ... This causes an increasing susceptibility to failure due to inadvertent noise,
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doi.ieeecomputersociety.org/10.1109/ICCD.1999.808435
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A method of extracting parasitic capacitance values from the physical design of an integrated circuit, and more particularly, to a method of extracting lateral coupling and fringing capacitance values from the physical design of an integrated circuit, wherein the integrated circuit comprises multiple layers ...
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www.patentgenius.com/patent/5706206.html
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