Fe–Pt films have been prepared on glass substrates kept at room temperature by a new sputtering method of multipolar magnetic plasma confinement. ...
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linkinghub.elsevier.com/retrieve/pii/S0304885304011126
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Vanadium oxides thin films prepared by magnetron sputtering methods have been studied with X-ray photoelectron spectroscopy, atomic force microscopy and ...
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linkinghub.elsevier.com/retrieve/pii/S0169433298002013
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The present disclosure pertains to our discovery that residual stress residing in a tantalum film or tantalum nitride film can be controlled (tuned) by controlling particular process variables during film deposition. ... Process variables of particular interest include: power to the sputtering target;
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www.patentgenius.com/patent/6139699.html
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A sputtering target may include: a) a backing adapted to be operatively connected to a sputter power source; ... What is claimed is: 1. A sputtering target, comprising: a) a backing adapted to be operatively connected to a sputtering power source;
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www.patentgenius.com/patent/6787003.html
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Process variables of particular interest include: power to the sputtering target; process chamber pressure (i.e., the concentration of various gases and ions present in the chamber); substrate DC offset bias voltage (typically an increase in the AC applied substrate bias power);
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www.patentstorm.us/patents/6139699.html
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This invention relates to deposition of sputtered films on substrates and, more particularly, to linear scan magnetron sputtering methods and apparatus which provide long target life and depositional thickness uniformity on large area substrates.
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www.patentstorm.us/patents/5873989-description.html
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09/586,326 filed Jun. 2, 2000 entitled “Fine Grain Size Material, Sputtering Target, Methods of Forming, and Micro-Arc Reduction Method” that is hereby incorporated by reference in its entirety. The present application is also a continuation-in-part application of U.S. patent application Ser.
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www.freepatentsonline.com/20030052000.html
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A target for use in sputtering may include a backing adapted to be operatively connected to a sputtering power source and an outer layer of a sputterable material carried by the backing The sputterable material comprises a mixture of zinc and a second metal having a melting point less than that of the zinc.
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www.freepatentsonline.com/20020192390.html
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Research methods - Sputtering ... Single crystalline as well as amorphous materials can be grown by the use of magnetron sputtering and/or Molecular Beam Epitaxy (MBE). ... Research methods...
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material.fysik.uu.se/Research/Methods/Sputtering.html
material.fysik.uu.se/Research/Methods/Sputtering.html
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