But it is also possible to apply the invention to a transistor which only has one finger-shaped gate region, source region and gate electrode each.
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www.patentstorm.us/patents/5132766/description.html
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The drain electrode of the thin film transistor has a segment 2 and 3 forbetter viewing), a capacitor electrode 24 and a thin film transistor (TFT) 26.
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www.patentstorm.us/patents/7417691/description.html
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Providing botanical, folk-lore and herbal information, plus organic herbs, and herbal products. Common Buckthorn; (Rhamnus cathartica); Click on graphic for larger imag Bear in mind "A Modern Herbal" was written with the conventional wisdom of the early 1900's. This should be taken into account as some of the...
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www.botanical.com/botanical/mgmh/b/buckth80.html
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Facts about field-effect transistor electrode: potentiometry, ...the response time of ion-selective electrodes. They dispense with the internal reference...
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www.britannica.com/facts/5/621250/field-effect-transist...
www.britannica.com/facts/5/621250/field-effect-transistor-electrode-as-discussed-in-analysis-physics-and-chemistry
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Currently available glass electrodes are unsuitable for this purpose because of their size and price. We have thus constructed and tested a small, combined ion sensitive field effect transistor (ISFET) pH electrode incorporating an integral reference electrode.
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gut.bmj.com/cgi/content/abstract/32/3/240
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Complete Patent Searching Database and Patent Data Analytics Services.
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www.freepatentsonline.com/2762955.html
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Complete Patent Searching Database and Patent Data Analytics Services.
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www.freepatentsonline.com/3255394.html
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Hans Stork, senior vice president of silicon technology, said a doubling of transistor density, For a 45-nm process developed to manufacture microprocessors for Sun Microsystems, TI plans to introduce a metal gate electrode to reduce the polysilicon depletion effect, which degrades the oxide's electrical performance.
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www.eet.com/news/latest/showArticle.jhtml?articleID=188...
www.eet.com/news/latest/showArticle.jhtml?articleID=188703092
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An ultimate scaling in the gate width in a carbon nanotube field-effect transistor (CNTFET) is demonstrated with a gate electrode which is formed by another CNT (width of ~3 nm) with conventional nanofabrication followed by manipulations with an atomic force microscope (AFM).
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www.iop.org/EJ/abstract/0957-4484/18/9/095202
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