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onlinelibrary.wiley.com/doi/10.1002/mop.23470/pdf
ABSTRACT: The high interdevice isolation levels is one of the key tech- nologies in ... proper interdevice isolation levels, we have analyzed and measured sub- ...
onlinelibrary.wiley.com/doi/10.1002/mop.23470/abstract
Mar 27, 2008 ... Interdevice isolation characteristics for design and fabrication of 60-GHz WPAN SoCs. Sungil Kim1,*,; Chul-Wook Lee1,; Suck-Won Yun1, ...
onlinelibrary.wiley.com/doi/10.1002/mop.23469/pdf
WPAN SoC having better interdevice isolation and keeping fab- ... Using InP substrate, we have studied the interdevice isolation char- acteristics for 60-GHz ...
link.aip.org/link/?APPLAB/83/4178/1
Interdevice isolation currents in mesa-isolated AlGaN/GaN high-electron-mobility transistors are found to exhibit thermally activated behavior, with an activation ...
144.206.159.178/FT/566/42729/773356.pdf
suppliers showed poor inter-device isolation characteristics, indicative of a conducting ... the third supplier showed excellent inter-device isolation, but C–V ...
144.206.159.178/FT/282/63181/1073104.pdf
inter-device isolation without loss of planarity. On the other hand, epitaxial layer technology requires mesa etching for inter-device isolation, which compromises ...
www.thatcorp.com/THAT_Semiconductor_Fabrication.shtml
The process is based on dielectric isolation (DI), and offers discrete-component performance within an integrated circuit. Inter-device isolation ranges up to 200V ...
etda.libraries.psu.edu/paper/8907/4201
2.3.4 Surface Treatment Effects on Interdevice Isolation Current................42. 2.3.5 Surface Treatment Effects on Ohmic Contact Formation ....................45 ...
ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=347258
Aug 6, 2002 ... 0.1 to 0.28 micron , dopant concentration , inter-device isolation , low-power capability , narrow-channel devices , shadow trench isolation ...
ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=5378060
Mar 3, 2011 ... Hall patterns, isolation test patterns, and HEMTs have been fabricated ... Hall mobility, sheet resistance, gate leakage, interdevice isolation, and ...
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